2N5401 PNP transistor 150V 600mA 310mW

Type – p-n-p
Collector-Emitter Voltage: -150 V
Collector-Base Voltage: -160 V
Emitter-Base Voltage: -5 V
Collector Current: -0.6 A
Collector Dissipation – 0.625 W
DC Current Gain (hfe) – 60 to 240
Transition Frequency – 100 MHz
Operating and Storage Junction Temperature Range -55 to +150 °C