- DC Current Gain-
: hFE= 25(Min)@IC = -1.5A · - Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= -100V(Min) · - Complement to Type TIP35C ·Current Gain-Bandwidth Product-
: fT= 3.0MHz(Min)@IC= -1.0A
Applications
- Designed for use in general purpose power amplifier and switching applications.
Specifications
Attribute | Value |
Category | Triode/MOS Tube/Transistor/Bipolar Transistors – BJT |
Datasheet | TIP36C |
Collector Cut-Off Current (Icbo) | 700uA |
Collector-Emitter Breakdown Voltage (Vceo) | 100V |
Power Dissipation (Pd) | 125W |
DC Current Gain (hFE@Ic,Vce) | 15@15A,4V |
Collector Current (Ic) | 25A |
Transition Frequency (fT) | 3MHz |
Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib) | 4V@25A,5A |
Transistor Type | PNP |
Operating Temperature | +150℃@(Tj) |
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