2SA1015 PNP Transistor 50V 0,15A

Key Features:

• Type: PNP Transistor
• Maximum Collector-Emitter Voltage (Vce): 50V
• Maximum Collector Current (Ic): 150mA
• Power Dissipation (Pd): Typically around 300mW (depends on the package and thermal management).
• DC Current Gain (hFE): Typically ranges from 100 to 300, depending on the current.
• Operating Frequency: Suitable for low-frequency applications, typically in the audio range.
• Package Type: Available in various packages, including TO-92.

Electrical Specifications:

• Collector-Base Voltage (Vcb): 50V
• Emitter-Base Voltage (Veb): 5V
• Operating Junction Temperature (Tj): Up to 150°C
• Thermal Resistance (Junction to Ambient, RθJA): Typically about 200-250 °C/W, depending on the specific package.

Applications:

• Audio Amplifiers: Commonly used in low-frequency audio amplifier circuits due to its good linearity and performance.
• Switching Circuits: Suitable for low-current switching applications, such as driving small relays and loads.
• Signal Processing: Works effectively in analog signal processing applications, including mixers and filters.
• General Purpose: Ideal for general-purpose applications requiring reliable PNP switching and amplification.

Important Notes:

• Polarity: Ensure correct polarity; as a PNP transistor, the emitter should be connected to the higher voltage relative to the collector.
• Biasing: Proper biasing is essential for ensuring that the transistor operates in the desired region (cut-off, active, or saturation).
• Heat Management: Monitor power dissipation and consider heat sink solutions if operating close to the transistor’s limit.

Pin Configuration (TO-92 Package):

1. Emitter (E)
2. Base (B)
3. Collector (C)