موسفيت 20N60 من النوع السالب (N) جهد 600 فولت 20 أمبير TO-3PN

20N60 / FQA20N60 N-Channel Power MOSFET

The 20N60 is a high-voltage N-Channel enhancement mode power MOSFET designed for high-efficiency switching and high-power applications. Utilizing advanced planar stripe and DMOS technology, it handles a 600V drain-source voltage and 20A continuous current. This transistor is engineered for robust performance under thermal stress, featuring excellent avalanche ruggedness and low on-state resistance to minimize power losses in demanding industrial and consumer circuits.

Key Features

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  High Power Capacity: Supports up to 600V (VDS) and 20A (ID), making it ideal for high-voltage power stages.

  
  


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  Superior Efficiency: Low on-resistance ($R_{DS(on)}$ as low as 0.32Ω) reduces conduction losses and improves system efficiency.

  
  


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  Advanced Switching: Optimized for high-speed switching with low gate charge and fast rise times (130 ns).

  
  


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  Thermal Management: Exceptional power dissipation capability (up to 416W) ensures stable operation in high-temperature environments.

  
  


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  Rugged Reliability: Built to withstand high-energy pulses in avalanche and commutation modes.

  
  

Technical Specifications

Pin Configurations:

Applications

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  Power Supplies: High-efficiency Switched Mode Power Supplies (SMPS), ATX power, and Server/Telecom power.

  
  


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  Motor & Motion Control: Suitable for motor drives, DC choppers, and industrial motion control systems.

  
  


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  Energy Conversion: Solar inverters, Uninterruptible Power Supplies (UPS), and DC-DC converters.

  
  


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  Industrial & Consumer: Active Power Factor Correction (PFC), lighting ballasts, and Plasma Display Panels (PDP).

  
  

Datasheet